Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTA180N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXTA180N10T is an N-channel enhancement mode MOSFET designed for high-current switching applications such as automotive systems, motor drives, and 42V power buses. It is packaged in a TO-263 case with a drain tab and weighs 2.5 g. The device has a maximum drain-source voltage of 100 V, a continuous drain current of 180 A at 25°C, and a maximum junction temperature of 175°C. It features an ultra-low on-resistance of 6.4 mΩ at 10 V gate voltage and 25 A drain current, is avalanche rated with an energy rating of 750 mJ, and includes a fast intrinsic diode. The package offers low inductance and is rated for soldering up to 300°C for 10 seconds. It meets AEC-Q200 qualification standards for automotive reliability.

Datasheet Summary
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The IXTA180N10T is an N-channel enhancement mode MOSFET designed for high-current switching applications such as automotive systems, motor drives, and 42V power buses. It is packaged in a TO-263 case with a drain tab and weighs 2.5 g. The device has a maximum drain-source voltage of 100 V, a continuous drain current of 180 A at 25°C, and a maximum junction temperature of 175°C. It features an ultra-low on-resistance of 6.4 mΩ at 10 V gate voltage and 25 A drain current, is avalanche rated with an energy rating of 750 mJ, and includes a fast intrinsic diode. The package offers low inductance and is rated for soldering up to 300°C for 10 seconds. It meets AEC-Q200 qualification standards for automotive reliability.

Suppliers

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Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTA180N10T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTA180N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXTA180N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 100V 180A MOSFET Transistor
278-IXTA180N10T
N-Channel 100V 180A MOSFET Transistor 278-IXTA180N10T
N-Channel MOSFET 100V 180A Power Transistor Product overview: IXTA180N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA180N10T can be used for catalog matching and distributor lookup.

N-Channel MOSFET 100V 180A Power Transistor Product overview: IXTA180N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA180N10T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 180A, To-263; Channel Type Littelfuse - 03AH1310 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 180A, To-263; Channel Type Littelfuse
03AH1310
Mosfet, N-Ch, 100V, 180A, To-263; Channel Type Littelfuse 03AH1310
MOSFET, N-CH, 100V, 180A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 180A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA180N10T 278-IXTA180N10T 03AH1310
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options N-Channel 100V 180A MOSFET Transistor Mosfet, N-Ch, 100V, 180A, To-263; Channel Type Littelfuse
Polarity N-Channel
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