The LSIC1MO120G0080 is a 1200 V, 80 mΩ N-channel silicon carbide MOSFET designed for high-frequency, high-efficiency switching applications. It is packaged in a TO-247-4L case with a separate driver source pin to reduce gate loop inductance. The device has a continuous drain current rating of 25 A at ≥100 °C and a maximum power dissipation of 214 W at 25 °C case temperature. Maximum thermal resistance from junction to case is 0.7 °C/W. Operating junction temperature ranges from -55 °C to 175 °C. The MOSFET operates normally off at all temperatures and meets RoHS standards.
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC
N-Channel 1200V 39A (Tc) 214W (Tc) Through Hole TO-247-4L
MOSFET SIC 1200V 25A TO247-4L
| Littelfuse, Inc. | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | LSIC1MO120G0080 | 18-LSIC1MO120G0080-ND | LSIC1MO120G0080 |
| Product Name | Enhancement Mode | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 1200 volts | ||
| IDSS | 25000 milliamps | ||
| TJ | 175 C (347 F) |
