The IXFN27N80Q is an N-channel enhancement mode Power MOSFET for high-voltage switching applications such as DC-DC converters and switched-mode power supplies. It is packaged in a miniBLOC, SOT-227 B format, measuring 31.50 to 31.88 mm in length, with a weight of 30 g. The device has a drain-source breakdown voltage of 800 V, continuous drain current of 27 A at 25°C, and a maximum on-resistance of 320 mΩ at 10 V gate voltage. It supports unclamped inductive switching with an avalanche energy rating of 2.5 J, features a fast intrinsic rectifier with reverse recovery time of 250 ns, and is rated for junction temperatures from -55°C to 150°C. The package meets UL 94 V-0 flammability standards and provides 2500 V~ isolation. Mounting torque is 1.5/13 Nm/lb.in. The device uses a rugged polysilicon gate structure with low package inductance.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
N CHANNEL MOSFET, 800V, 27A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.32ohm; Transistor Mounting:Module; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN27N80Q | 14J1686 |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N Channel Mosfet, 800V, 27A, Sot-227B; Transistor Polarity Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
