Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN27N80Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
  • 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN27N80Q - Littelfuse, Inc.
    Littelfuse, Inc.
  • N Channel Mosfet, 800V, 27A, Sot-227B; Transistor Polarity Ixys Semiconductor - 14J1686 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN27N80Q - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN27N80Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN27N80Q
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

Supplier's Site Datasheet
N Channel Mosfet, 800V, 27A, Sot-227B; Transistor Polarity Ixys Semiconductor - 14J1686 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 800V, 27A, Sot-227B; Transistor Polarity Ixys Semiconductor
14J1686
N Channel Mosfet, 800V, 27A, Sot-227B; Transistor Polarity Ixys Semiconductor 14J1686
N CHANNEL MOSFET, 800V, 27A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.32ohm; Transistor Mounting:Module; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 800V, 27A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.32ohm; Transistor Mounting:Module; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN27N80Q 14J1686
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N Channel Mosfet, 800V, 27A, Sot-227B; Transistor Polarity Ixys Semiconductor
Polarity N-Channel N-Channel
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