Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN64N60P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
  • 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN64N60P - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor - 58M7626 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Datasheet
Datasheet Summary
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The IXFN64N60P is an N-channel enhancement mode power MOSFET rated for 600 V drain-source voltage and 50 A continuous drain current, designed for high-power switching applications such as DC-DC converters, synchronous rectification, and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227B) case measuring 31.88 mm x 25.42 mm with a height of 12.22 mm, featuring aluminum nitride isolation and a mounting torque of 1.13 Nm. The device has a typical on-resistance of 96 mΩ, a thermal resistance from junction to case of 0.18 °C/W, and is rated for operation from -55 °C to +150 °C. It is avalanche rated with an single-pulse energy of 80 mJ and includes a fast intrinsic diode with reverse recovery time of 200 ns. The package meets UL 94 V-0 flammability standards and supports unclamped inductive switching. Terminal and mounting torque are specified at 1.13 Nm.

Datasheet Summary
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The IXFN64N60P is an N-channel enhancement mode power MOSFET rated for 600 V drain-source voltage and 50 A continuous drain current, designed for high-power switching applications such as DC-DC converters, synchronous rectification, and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227B) case measuring 31.88 mm x 25.42 mm with a height of 12.22 mm, featuring aluminum nitride isolation and a mounting torque of 1.13 Nm. The device has a typical on-resistance of 96 mΩ, a thermal resistance from junction to case of 0.18 °C/W, and is rated for operation from -55 °C to +150 °C. It is avalanche rated with an single-pulse energy of 80 mJ and includes a fast intrinsic diode with reverse recovery time of 200 ns. The package meets UL 94 V-0 flammability standards and supports unclamped inductive switching. Terminal and mounting torque are specified at 1.13 Nm.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN64N60P - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN64N60P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN64N60P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor - 58M7626 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor
58M7626
Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor 58M7626
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:64A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:700W; MSL:- RoHS Compliant: Yes

MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:64A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:700W; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN64N60P 58M7626
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor
Polarity N-Channel
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