The IXTH02N250 is an N-channel enhancement mode MOSFET designed for high-voltage applications such as power supplies, capacitor discharge, and pulse circuits. It is packaged in a TO-247 case with a weight of 6 grams and has a maximum drain-source voltage rating of 2500 V. The device features a fast intrinsic diode, low package inductance, and a drain-source on-resistance of 450 Ω at 25°C with a gate-source voltage of 10 V. It supports a continuous drain current of 200 mA and a peak pulse current of 600 mA. The maximum power dissipation is 83 W at 25°C case temperature, with a maximum junction temperature of 150°C. The part meets thermal and electrical reliability standards implied by its specified operational limits and mounting torque of 1.13 Nm. The TO-247 package allows for easy mounting and space savings in high-voltage designs.
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density High blocking voltage Proprietary high voltage ISOPLUS™ packages Up to 4.5 kV electrical isolation (DCB) UL 94 V-0 Flammability qualified (molding epoxies)
250V N-Channel MOSFET Power Transistor Product overview: IXTH02N250 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 250V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH02N250 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 2.5KV, 200MA, 83W; Channel Type:N Channel; Drain Source Voltage Vds:2.5kV; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH02N250 | 278-IXTH02N250 | 03AH1443 |
| Product Name | 2500V - 4700V N-Channel Standard Power MOSFETs | N-Channel 250V MOSFET Transistor | Mosfet, N-Ch, 2.5Kv, 200Ma, 83W; Channel Type Littelfuse |
| Polarity | N-Channel |
