Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXTP12N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
  • 24 V Bidirectional 250 W Discrete TVS Diode - IXTP12N65X2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 650V, 12A, To-220Ab; Channel Type Ixys Semiconductor - 02AC9840 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Datasheet

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXTP12N65X2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXTP12N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXTP12N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 650V, 12A, To-220Ab; Channel Type Ixys Semiconductor - 02AC9840 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 12A, To-220Ab; Channel Type Ixys Semiconductor
02AC9840
Mosfet, N-Ch, 650V, 12A, To-220Ab; Channel Type Ixys Semiconductor 02AC9840
MOSFET, N-CH, 650V, 12A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 12A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP12N65X2 02AC9840
Product Name 24 V Bidirectional 250 W Discrete TVS Diode Mosfet, N-Ch, 650V, 12A, To-220Ab; Channel Type Ixys Semiconductor
Polarity N-Channel
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