The IXTP12N65X2 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It comes in a TO-220 package with a weight of 3.0 g, a maximum drain-source voltage of 650 V, and a continuous drain current of 12 A at 25°C. The device features a maximum on-state resistance of 300 mΩ at 10 V gate drive, an avalanche energy rating of 300 mJ, and a maximum junction temperature of 150°C. It is avalanche rated, has low package inductance, and meets international standard package requirements. Thermal resistance from junction to case is 0.50 °C/W for the TO-220 package. The part is compliant with RoHS and has a gate-source voltage range of ±30 V continuous. 10-Level qualified due to avalanche capability.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
MOSFET, N-CH, 650V, 12A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP12N65X2 | 02AC9840 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | Mosfet, N-Ch, 650V, 12A, To-220Ab; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
