The IXFL100N50P is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor control. It features an ISOPLUS264 package with a direct-copper-bond substrate, providing an isolated mounting surface and 2500 V~ electrical isolation. The device has a drain-source voltage rating of 500 V, a continuous drain current of 68 A at 25°C, and a maximum RDS(on) of 52 mΩ at 10 V gate voltage. It is avalanche rated, with a single pulse energy rating of 5 J, and includes a fast intrinsic rectifier with reverse recovery time ≤ 200 ns. Thermal resistance from junction to case is 0.20 °C/W, and it operates from -55 °C to 150 °C junction temperature. The part meets AEC-Q200 automotive qualification standards and is RoHS compliant.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | RS Components, Ltd. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFL100N50P | 1258039 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | MOSFETs |
| Polarity | N-Channel | N-Channel |
