The IXFT120N30X3HV is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-268HV case with a drain tab and weighs 4 g. The device has a drain-source breakdown voltage of 300 V, a continuous drain current of 120 A at 25°C, and a maximum on-resistance of 11.0 mΩ at 10 V gate drive. It is avalanche rated with an energy rating of 2 J and supports a transient dv/dt up to 50 V/ns. The maximum junction temperature is 150°C, and the thermal resistance from junction to case is 0.17 °C/W. The device meets international standard packaging requirements and is designed for low package inductance and easy mounting.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
MOSFET, N-CH, 300V, 120A, 150DEG C, 735W; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
MOSFET, 120A, 300V, 735W, TO-268HV ROHS COMPLIANT: YES
| Littelfuse, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFT120N30X3HV | 03AH0916 | 29AK0440 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | Mosfet, N-Ch, 300V, 120A, 150Deg C, 735W; Channel Type Littelfuse | Mosfet, 120A, 300V, 735W, To-268Hv Rohs Compliant Littelfuse |
| Polarity | N-Channel |
