Littelfuse, Inc. Enhancement Mode LSIC1MO120G0160

Description
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC
Request a Quote Datasheet
Description
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Enhancement Mode - LSIC1MO120G0160 - Littelfuse, Inc.
Rosemont, IL, United States
Enhancement Mode
LSIC1MO120G0160
Enhancement Mode LSIC1MO120G0160
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC

Supplier's Site Datasheet
Single FETs, MOSFETs - 18-LSIC1MO120G0160-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
18-LSIC1MO120G0160-ND
Single FETs, MOSFETs 18-LSIC1MO120G0160-ND
N-Channel 1200V 22A (Tc) 125W (Tc) Through Hole TO-247-4L

N-Channel 1200V 22A (Tc) 125W (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - LSIC1MO120G0160 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
LSIC1MO120G0160
Discrete Semiconductor Products - Transistors - FETs, MOSFETs LSIC1MO120G0160
MOSFET SIC 1200V 14A TO247-4L

MOSFET SIC 1200V 14A TO247-4L

Supplier's Site

Technical Specifications

  Littelfuse, Inc. DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number LSIC1MO120G0160 18-LSIC1MO120G0160-ND LSIC1MO120G0160
Product Name Enhancement Mode Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 1200 volts
IDSS 14000 milliamps
TJ 175 C (347 F)
Unlock Full Specs
to access all available technical data

Similar Products

1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor - QPD1028L - Qorvo
Specs
Transistor Technology / Material 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
Transistor Grade / Operating Range Military
Package Type NI-780
View Details
2 suppliers
GaAs Fet Switches - KS200 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details