The LSIC1MO120G0160 is a 1200 V, 160 mΩ N-channel silicon carbide MOSFET in a TO-247-4L package, designed for high-frequency, high-efficiency applications such as solar inverters and switch mode power supplies. It has a continuous drain current of 14 A at TC = 100 °C and a pulsed drain current of 45 A. The device features a separate driver source pin for reduced gate loop inductance, normally-off operation at all temperatures, and a maximum junction temperature of 175 °C. Maximum thermal resistance from junction to case is 1.2 °C/W. The package dimensions are 21.46 mm × 16.26 mm, with a lead pitch of 2.54 mm BSC. It is RoHS compliant, lead-free, and halogen-free.
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance.The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance. Positive temperature coefficient 175ºC maximum operating junction temperature Fast and low losses switching, MOSFETs optimized for high frequency switching SiC diodes with nearly zero reverse recovery current Dedicated Kelvin connection to source Low RthJC
MOSFET SIC 1200V 14A TO247-4L
| Littelfuse, Inc. | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | LSIC1MO120G0160 | LSIC1MO120G0160 |
| Product Name | Enhancement Mode | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 1200 volts | |
| IDSS | 14000 milliamps |
