The IXTH6N100D2 is a depletion-mode N-channel MOSFET designed for normally-on operation in applications such as audio amplifiers, start-up circuits, and protection circuits. It is packaged in a TO-247 case with a weight of 6.0 g and has a maximum drain-to-source voltage of 1000 V. The device supports a continuous drain current of 6 A and a peak pulsed current of 16 A, with a maximum power dissipation of 300 W at 25°C. The drain-to-source on-resistance is rated at 2.2 Ω, and the gate threshold voltage ranges from -2.5 V to -4.5 V. The molding epoxies meet UL 94 V-0 flammability classification. Thermal resistance from junction to case is 0.21 °C/W. Maximum junction temperature is 150 °C. The device is rated for a maximum lead soldering temperature of 260 °C for 10 seconds, with a mounting torque of 1.13 Nm.
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Power Field-Effect Transistor, Product overview: IXTH6N100D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH6N100D2 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1KV, 6A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:4.5V; No. of Pins:3PinsRoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH6N100D2 | 278-IXTH6N100D2 | 03AH1524 |
| Product Name | 100V - 1700V N-Channel Depletion Mode Power MOSFETs | MOSFET Transistor | Mosfet, N-Ch, 1Kv, 6A, To-247; Channel Type Littelfuse |
| Polarity | N-Channel |
