Littelfuse, Inc. 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXTA220N04T2

Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
  • 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTA220N04T2 - Littelfuse, Inc.
    Littelfuse, Inc.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA220N04T2 - 1066195-IXTA220N04T2 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXTA220N04T2 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options
IXTA220N04T2
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options IXTA220N04T2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA220N04T2 - 1066195-IXTA220N04T2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA220N04T2
1066195-IXTA220N04T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA220N04T2 1066195-IXTA220N04T2
Manufacturer: Littelfuse Inc. Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1066195-IXTA220N04T2 Drain to Source Voltage (Vdss): 40 V Power Dissipation: 360 W Categories: Transistors - FETs, MOSFETs - RF Popularity: Low Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Shortage Reverse Recovery Time: 45 ns Rds On Max: 3.5 mΩ

Manufacturer: Littelfuse Inc.
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1066195-IXTA220N04T2
Drain to Source Voltage (Vdss): 40 V
Power Dissipation: 360 W
Categories: Transistors - FETs, MOSFETs - RF
Popularity: Low
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Shortage
Reverse Recovery Time: 45 ns
Rds On Max: 3.5 mΩ

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ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-IXTA220N04T2
MOSFET Transistor 278-IXTA220N04T2
Power Field-Effect Transistor, Product overview: IXTA220N04T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA220N04T2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTA220N04T2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA220N04T2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA220N04T2 1066195-IXTA220N04T2 278-IXTA220N04T2
Product Name 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA220N04T2 MOSFET Transistor
Polarity N-Channel
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