IXTP75N10P is an N-channel enhancement mode MOSFET rated for 100 V drain-source voltage and 75 A continuous drain current at 25°C. It is housed in a TO-220 package weighing 4 g, with a maximum junction temperature of 175°C. The device has a maximum on-state resistance of 25 mΩ at 25°C and 10 V gate-source voltage, and an unclamped inductive switching energy rating of 1.0 J. It is avalanche rated, features low package inductance, and meets international standard package dimensions. Thermal resistance from junction to case is 0.25°C/W. The gate charge is 74 nC, and it supports a transient gate-source voltage of ±30 V. The source-drain diode has a repetitive peak current of 200 A and a forward voltage of 1.5 V at 75 A. The device complies with AEC-Q200 and RoHS standards.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: IXTP75N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 75A, 100V, 0.025ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75A, 100V, 0.025ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP75N10P can be used for catalog matching and distributor lookup.
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V; Power Dissipation:360W RoHS Compliant: Yes
| Littelfuse, Inc. | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP75N10P | 193486 | 193486P | 278-IXTP75N10P | 58M7669 |
| Product Name | 100V - 1200V N-Channel Standard Power MOSFETs | MOSFETs | MOSFETs | N-Channel 75A 100V 0.025ohm MOSFET Transistor | Mosfet, N, To-220; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220 | TO-220; To-220 | TO-220; TO-220 | TO-3; TO-220 | |
| MOSFET Operating Mode | Enhancement |
