Littelfuse, Inc. 24 V Bidirectional 250 W Discrete TVS Diode IXFB150N65X2

Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFB150N65X2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It features a drain-source voltage rating of 650 V, a continuous drain current of 150 A at 25°C, and a maximum on-resistance of 17 mΩ at 10 V gate voltage. The device is housed in a PLUS264 package, weighs 10 g, and is rated for junction and storage temperatures from -55°C to 150°C. It is avalanche rated, has a fast intrinsic diode with a forward voltage of 1.4 V at 100 A, and meets RoHS standards. The part has a thermal resistance of 0.08 °C/W from junction to case and exhibits low gate charge and package inductance for efficient high-frequency operation.

Datasheet Summary
Powered by GS/AI

The IXFB150N65X2 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode power supplies, DC-DC converters, and motor drives. It features a drain-source voltage rating of 650 V, a continuous drain current of 150 A at 25°C, and a maximum on-resistance of 17 mΩ at 10 V gate voltage. The device is housed in a PLUS264 package, weighs 10 g, and is rated for junction and storage temperatures from -55°C to 150°C. It is avalanche rated, has a fast intrinsic diode with a forward voltage of 1.4 V at 100 A, and meets RoHS standards. The part has a thermal resistance of 0.08 °C/W from junction to case and exhibits low gate charge and package inductance for efficient high-frequency operation.

Suppliers

Company
Product
Description
Supplier Links
24 V Bidirectional 250 W Discrete TVS Diode - IXFB150N65X2 - Littelfuse, Inc.
Rosemont, IL, United States
24 V Bidirectional 250 W Discrete TVS Diode
IXFB150N65X2
24 V Bidirectional 250 W Discrete TVS Diode IXFB150N65X2
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFB150N65X2
MOSFET Transistor 278-IXFB150N65X2
Power Field-Effect Transistor, Product overview: IXFB150N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB150N65X2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFB150N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB150N65X2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, 150A, 650V, 1.56Kw, Plus264 Rohs Compliant Littelfuse - 29AK0421 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 150A, 650V, 1.56Kw, Plus264 Rohs Compliant Littelfuse
29AK0421
Mosfet, 150A, 650V, 1.56Kw, Plus264 Rohs Compliant Littelfuse 29AK0421
MOSFET, 150A, 650V, 1.56KW, PLUS264 ROHS COMPLIANT: YES

MOSFET, 150A, 650V, 1.56KW, PLUS264 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFB150N65X2 278-IXFB150N65X2 29AK0421
Product Name 24 V Bidirectional 250 W Discrete TVS Diode MOSFET Transistor Mosfet, 150A, 650V, 1.56Kw, Plus264 Rohs Compliant Littelfuse
Polarity N-Channel
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