The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to reduce the on-state resistance, to minimize the power losses, while maintaining excellent switching performance. This makes them ideal for high-frequency, and high-efficiency power-management applications like DC/DC converter, switch mode power supplies, induction heating and motor drives. 1200V with low RDS(on) = 36 mΩ SiC MOSFET Technology with 0/+15..+18 V gate drive High-performance ceramic based isolated package Isolation voltage 2500 VAC (RMS), 1 minute Low input capacitance 2453 pF Industry standard package outline
The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to reduce the on-state resistance, to minimize the power losses, while maintaining excellent switching performance. This makes them ideal for high-frequency, and high-efficiency power-management applications like DC/DC converter, switch mode power supplies, induction heating and motor drives. 1200V with low RDS(on) = 36 mΩ SiC MOSFET Technology with 0/+15..+18 V gate drive High-performance ceramic based isolated package Isolation voltage 2500 VAC (RMS), 1 minute Low input capacitance 2453 pF Industry standard package outline
