Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFX240N25X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
  • 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFX240N25X3 - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, 240A, 250V, 1.25Kw, Plus247 Rohs Compliant Littelfuse - 29AK0445 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXFX240N25X3 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a PLUS247 case, weighs 6 g, and has a maximum drain-source voltage of 250 V, continuous drain current of 160 A, and peak pulsed drain current of 600 A. The device features a maximum on-resistance of 5.0 mΩ at 10 V gate voltage and 240 A drain current, and is rated for an operating junction temperature range of -55°C to 150°C. It is avalanche-rated, has a fast intrinsic diode with a forward voltage of 1.4 V at 100 A, and exhibits low gate charge and package inductance. The part meets international standard packaging requirements and is manufactured with a process that enables high power density and easy mounting.

Datasheet Summary
Powered by GS/AI

The IXFX240N25X3 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a PLUS247 case, weighs 6 g, and has a maximum drain-source voltage of 250 V, continuous drain current of 160 A, and peak pulsed drain current of 600 A. The device features a maximum on-resistance of 5.0 mΩ at 10 V gate voltage and 240 A drain current, and is rated for an operating junction temperature range of -55°C to 150°C. It is avalanche-rated, has a fast intrinsic diode with a forward voltage of 1.4 V at 100 A, and exhibits low gate charge and package inductance. The part meets international standard packaging requirements and is manufactured with a process that enables high power density and easy mounting.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFX240N25X3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFX240N25X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFX240N25X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, 240A, 250V, 1.25Kw, Plus247 Rohs Compliant Littelfuse - 29AK0445 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 240A, 250V, 1.25Kw, Plus247 Rohs Compliant Littelfuse
29AK0445
Mosfet, 240A, 250V, 1.25Kw, Plus247 Rohs Compliant Littelfuse 29AK0445
MOSFET, 240A, 250V, 1.25KW, PLUS247 ROHS COMPLIANT: YES

MOSFET, 240A, 250V, 1.25KW, PLUS247 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX240N25X3 29AK0445
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, 240A, 250V, 1.25Kw, Plus247 Rohs Compliant Littelfuse
Polarity N-Channel
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