Littelfuse, Inc. 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN73N30

Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
Request a Quote
Description
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFN73N30 is an N-channel enhancement mode MOSFET for high-power switching applications such as DC-DC conversion and synchronous rectification. It is packaged in a miniBLOC (SOT-227B) case measuring 31.50 to 31.88 mm in length, 7.80 to 8.20 mm in width, and 24.59 to 25.07 mm in height. It has a 300 V drain-source breakdown voltage, a continuous drain current of 73 A at 25°C, and a maximum on-state resistance of 45 mΩ at 10 V gate-source voltage. The device is avalanche rated with 30 mJ energy capability and supports a dv/dt of 5 V/ns. It features a fast intrinsic diode with 2 µC reverse recovery charge. The junction temperature range is -55°C to +150°C. Thermal resistance from junction to case is 0.24 K/W. The product meets UL 94 V-0 flammability standards.

Datasheet Summary
Powered by GS/AI

The IXFN73N30 is an N-channel enhancement mode MOSFET for high-power switching applications such as DC-DC conversion and synchronous rectification. It is packaged in a miniBLOC (SOT-227B) case measuring 31.50 to 31.88 mm in length, 7.80 to 8.20 mm in width, and 24.59 to 25.07 mm in height. It has a 300 V drain-source breakdown voltage, a continuous drain current of 73 A at 25°C, and a maximum on-state resistance of 45 mΩ at 10 V gate-source voltage. The device is avalanche rated with 30 mJ energy capability and supports a dv/dt of 5 V/ns. It features a fast intrinsic diode with 2 µC reverse recovery charge. The junction temperature range is -55°C to +150°C. Thermal resistance from junction to case is 0.24 K/W. The product meets UL 94 V-0 flammability standards.

Suppliers

Company
Product
Description
Supplier Links
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN73N30 - Littelfuse, Inc.
Rosemont, IL, United States
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFN73N30
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFN73N30
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 73A 300V 0.045ohm MOSFET Transistor
278-IXFN73N30
N-Channel 73A 300V 0.045ohm MOSFET Transistor 278-IXFN73N30
Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Product overview: IXFN73N30 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 73A, 300V, 0.045ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 73A, 300V, 0.045ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN73N30 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Product overview: IXFN73N30 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 73A, 300V, 0.045ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 73A, 300V, 0.045ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN73N30 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor - 97K2551 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor
97K2551
Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor 97K2551
MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:73A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:520W; MSL:- RoHS Compliant: Yes

MOSFET, N, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:73A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:520W; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN73N30 278-IXFN73N30 97K2551
Product Name 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 73A 300V 0.045ohm MOSFET Transistor Mosfet, N, Sot-227B; Channel Type Ixys Semiconductor
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

CSD16409Q3 N-Channel NexFET™ Power MOSFET - CSD16409Q3 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 25 volts
rDS(on) 0.0124 ohms
View Details
7 suppliers
 - AUIRF1404S - Rochester Electronics
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type D2PAK
Packing Method Tube; Tube
View Details
6 suppliers
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD910022SALI - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10.6 volts
View Details
3 suppliers