The IXFK64N50P is an N-channel enhancement mode MOSFET rated for 500 V drain-source voltage and 64 A continuous drain current, designed for high-power switching applications. It comes in a TO-264 package measuring 20.80 to 21.34 mm in length and 15.75 to 16.13 mm in width, weighing 10 g. The device has a maximum on-state resistance of 85 mΩ at 25°C and 10 V gate-source voltage. It features a fast intrinsic diode with a reverse recovery charge of 200 nC at 25 A and a di/dt of 100 A/μs, is avalanche rated with 2.5 J single-pulse energy, and has a gate charge of 150 nC. Thermal resistance from junction to case is 0.15 °C/W. Operating junction temperature ranges from -55°C to 150°C.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
Power Field-Effect Transistor, 64A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Product overview: IXFK64N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 64A, 500V, 0.085ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 64A, 500V, 0.085ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFK64N50P can be used for catalog matching and distributor lookup.
MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:64A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V; Power Dissipation:830W RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFK64N50P | 278-IXFK64N50P | 58M7613 |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | N-Channel 64A 500V 0.085ohm MOSFET Transistor | Mosfet, N, To-264; Channel Type Ixys Semiconductor |
| Polarity | N-Channel |
