The IXTH160N10T is an N-channel enhancement mode MOSFET designed for high-current switching in automotive and power supply applications. It is packaged in a TO-247 case with dimensions of 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 160 A at 25°C, and a maximum on-resistance of 7.0 mΩ at 10 V gate voltage and 25 A drain current. It operates with a junction temperature up to 175°C and is avalanche rated with an energy rating of 500 mJ. The package has low inductance and complies with AEC-Q200 and RoHS standards.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
Power Field-Effect Transistor, Product overview: IXTH160N10T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTH160N10T can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 100V, 160A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:160A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH160N10T | 278-IXTH160N10T | 03AH1475 |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options | MOSFET Transistor | Mosfet, N-Ch, 100V, 160A, To-247; Channel Type Littelfuse |
| Polarity | N-Channel |
