Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
N-Channel MOSFET, 650V, 150A, High Voltage Power Transistor Product overview: IXFN150N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650V, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN150N65X2 can be used for catalog matching and distributor lookup.
Ultra junction MOSFET 150A 650V SOT227
Ultra junction MOSFET 150A 650V SOT227
MOSFET, MODULE, N-CH, 650V, 145A; Channel Type:N Channel; Continuous Drain Current Id:145A; Drain Source Voltage Vds:650V; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:1.04kW RoHS Compliant: Yes
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN150N65X2 | 278-IXFN150N65X2 | 1464239 | 03AH0720 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | N-Channel 650V 150A MOSFET Transistor | MOSFETs | Mosfet, Module, N-Ch, 650V, 145A; Channel Type Littelfuse |
| Polarity | N-Channel | N-Channel | ||
| Package Type | SOT-227 | Sot227 | TO-3 | |
| MOSFET Operating Mode | Enhancement |
