The IXFN200N07 is an N-channel enhancement mode Power MOSFET designed for high-current switching applications such as DC-DC converters, synchronous rectification, and switched-mode power supplies. It is packaged in a miniBLOC (SOT-227B) with dimensions of 31.50-31.88 mm in length and weighs 30 g. The device features a maximum drain-source voltage of 70 V, continuous drain current of 200 A at 25°C, and a maximum on-resistance of 6 mΩ at 10 V gate voltage. It is avalanche rated, supports unclamped inductive switching with 2 J energy rating, and has a fast intrinsic rectifier with reverse recovery time up to 250 ns. Thermal resistance from junction to case is 0.05 K/W, and junction temperature ranges from -55°C to +150°C. The device meets RoHS standards and is rated for 5 V/ns dv/dt under specified conditions.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET, N CHANNEL, 4V, 200A, SOT-227B; Channel Type:N Channel; Drain Source Voltage Vds:70V; Continuous Drain Current Id:200A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN200N07 | 14J1683 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Mosfet, N Channel, 4V, 200A, Sot-227B; Channel Type Ixys Semiconductor |
| Polarity | N-Channel | N-Channel |
