The IXTH220N20X4 is a 200V N-channel enhancement mode MOSFET designed for high-power switching applications such as switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and a maximum lead temperature for soldering of 300°C for 10 seconds. The device features a maximum on-state resistance of 5.5 mΩ at 25°C, a continuous drain current of 220 A, and an avalanche energy rating of 900 mJ. It supports junction temperatures from -55°C to 175°C and meets international standard package requirements with low package inductance and avalanche capability. Thermal resistance from junction to case is 0.19 °C/W, and junction-to-case thermal resistance is 0.21 °C/W. The device is avalanche rated and features low gate and output charge characteristics for efficient switching.
The new 200V X4 Ultra Junction MOSFETs are designed with the latest Ultra Junction technology for high efficiency power applications. They are available in TO-247 and TO-268HV Packages. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient switching at given frequency. Low Gate Charge Low RDS(on) Low RthJC 175°C Operating Temperature High Avalanche rating (900mJ - 1J)
MOSFET, N-CH, 200V, 220A, TO-247 ROHS COMPLIANT: YES
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTH220N20X4 | 62AJ4094 |
| Product Name | 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options | Mosfet, N-Ch, 200V, 220A, To-247 Rohs Compliant Littelfuse |
| Polarity | N-Channel |
