Littelfuse, Inc. 100V - 1200V N-Channel Standard Power MOSFETs IXTK200N10P

Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Description
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
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Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Standard Power MOSFETs - IXTK200N10P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Standard Power MOSFETs
IXTK200N10P
100V - 1200V N-Channel Standard Power MOSFETs IXTK200N10P
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance

Supplier's Site Datasheet
Singapore
N-Channel 200A 100V 0.0075ohm MOSFET Transistor
278-IXTK200N10P
N-Channel 200A 100V 0.0075ohm MOSFET Transistor 278-IXTK200N10P
Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Product overview: IXTK200N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200A, 100V, 0.0075ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200A, 100V, 0.0075ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTK200N10P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Product overview: IXTK200N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200A, 100V, 0.0075ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200A, 100V, 0.0075ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTK200N10P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N, To-264; Channel Type Ixys Semiconductor - 58M7656 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-264; Channel Type Ixys Semiconductor
58M7656
Mosfet, N, To-264; Channel Type Ixys Semiconductor 58M7656
MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:200A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:800W RoHS Compliant: Yes

MOSFET, N, TO-264; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:200A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:5V; Power Dissipation:800W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTK200N10P 278-IXTK200N10P 58M7656
Product Name 100V - 1200V N-Channel Standard Power MOSFETs N-Channel 200A 100V 0.0075ohm MOSFET Transistor Mosfet, N, To-264; Channel Type Ixys Semiconductor
Polarity N-Channel
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