Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFP36N20X3M

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
  • 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFP36N20X3M - Littelfuse, Inc.
    Littelfuse, Inc.
  • Mosfet, N-Ch, 200V, 36A, To-220; Channel Type Littelfuse - 03AH0824 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
Datasheet
Datasheet Summary
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The IXFP36N20X3M is an N-channel enhancement mode power MOSFET with a 200V drain-source breakdown voltage and a continuous drain current of 36A at 25°C. It features an OVERMOLDED TO-220 package with an electrically isolated tab and a thermal resistance junction-to-case of 3.5°C/W. The device has a maximum RDS(on) of 45mΩ at 18A and 10V gate-source voltage, and is rated for avalanche energy up to 300mJ. It supports a transient gate-source voltage of ±30V and offers 2500V electrical isolation. The MOSFET is avalanche rated, has low package inductance, and operates over a junction temperature range of -55°C to +150°C. It meets the International Standard Package format and is compliant with RoHS standards.

Datasheet Summary
Powered by GS/AI

The IXFP36N20X3M is an N-channel enhancement mode power MOSFET with a 200V drain-source breakdown voltage and a continuous drain current of 36A at 25°C. It features an OVERMOLDED TO-220 package with an electrically isolated tab and a thermal resistance junction-to-case of 3.5°C/W. The device has a maximum RDS(on) of 45mΩ at 18A and 10V gate-source voltage, and is rated for avalanche energy up to 300mJ. It supports a transient gate-source voltage of ±30V and offers 2500V electrical isolation. The MOSFET is avalanche rated, has low package inductance, and operates over a junction temperature range of -55°C to +150°C. It meets the International Standard Package format and is compliant with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFP36N20X3M - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFP36N20X3M
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFP36N20X3M
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages

Supplier's Site Datasheet
Mosfet, N-Ch, 200V, 36A, To-220; Channel Type Littelfuse - 03AH0824 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 36A, To-220; Channel Type Littelfuse
03AH0824
Mosfet, N-Ch, 200V, 36A, To-220; Channel Type Littelfuse 03AH0824
MOSFET, N-CH, 200V, 36A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 36A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFP36N20X3M 03AH0824
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Mosfet, N-Ch, 200V, 36A, To-220; Channel Type Littelfuse
Polarity N-Channel
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