Insulated Gate Bipolar Transistors (IGBT) Datasheets

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
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Insulated Gate Bipolar Transistors (IGBT) Datasheets From:
Headquarters
Allen-Bradley / Rockwell Automation
United States
Fuji Electric Corp. of America
United States
Infineon Technologies AG
Germany
ODG (Origin Data Global)
China
Radwell International
United States
Richardson RFPD
United States
Rochester Electronics
United States
RS Components, Ltd.
United Kingdom
Win Source Electronics
United States
LIXINC Electronics Co., Limited
China
Nexperia B.V.
Netherlands
Skyworks Solutions, Inc.
United States
TE Connectivity
United States
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
LCSC Electronics Technology (HK) Limited
China
Littelfuse, Inc.
United States
ROHM Semiconductor GmbH
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
Shenzhen Shengyu Electronics Technology Limited
China
Solid State Devices, Inc.
La Mirada, CA
Toshiba America, Inc.
New York, NY
Utmel Electronic Limited
China
ABB AB
Switzerland
Allied Electronics, Inc.
Fort Worth, TX
Alpha & Omega Semiconductor, Ltd.
United States
Bourns, Inc.
Riverside, CA
Cosel U.S.A., Inc.
United States
Cypress Semiconductor Corp.
United States
Danfoss Inc.
Canada
DIODES Incorporated
United States
Diotec Semiconductor
Germany
Dynex Semiconductor
United Kingdom
Eaton Corporation
Cleveland, OH
Fuji Electric Global
Japan
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
GeneSiC Semiconductor, Inc.
United States
Hangzhou Silan Microelectronics Co., Ltd.
China
Hitachi, Ltd.
Japan
IXYS Corporation
United States
IXYS Integrated Circuits Division
United States
IXYS UK Westcode Ltd.
United Kingdom
KEC Corporation
Korea, South
KYOCERA AVX Components Corporation
Fountain Inn, SC
Micrel, Inc.
United States
Micro Commercial Components Corp.
United States
Microchip Technology, Inc.
United States
Microsemi Corp.
United States
Mitsubishi Corporation
Japan
Mitsubishi Electric & Electronics USA, Inc.
United States
Motorola Solutions, Inc.
United States
multicomp PRO
Chicago, IL
NCEPOWER 
China
NEC Corporation
United States
Newark, An Avnet Company
United States
NTE Electronics, Inc.
United States
NXP Semiconductors
United States
onsemi
United States
Opto 22
Temecula, CA
Panasonic
Newark, NJ
PANJIT SemiConductor
Tempe, AZ
Powerex, Inc.
United States
Renesas Electronics Corporation
Milpitas, CA
ROHM Co., Ltd.
Japan
Sanken Electric Co., Ltd.
Japan
Semikron, Inc.
Hudson, NH
SemiQ Inc.
Lake Forest, CA
ShenZhen SlkorMicro Semicon Co., Ltd.
China
Shenzhen SPTECH Micro-electronics Co., Ltd.
China
Siemens AG
Germany
Siemens Analytical Products
United States
StarPower Europe AG
Switzerland
STMicroelectronics, Inc.
United States
STMicroelectronics
Switzerland
TE Connectivity ™
Berwyn, PA
Toshiba Corporation
Japan
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
Vishay Intertechnology, Inc.
United States
Vishay Precision Group
United States
WeEn Semiconductors
China
Xilinx, Inc.
United States
Zebra Technologies Corporation
Vernon Hills, IL