onsemi IGBTs - Single - FGA20N120FTDTU FGA20N120FTDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204167-FGA20N120FTDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 447ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 137nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 298W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 450
  • IGBTs - Single - FGA20N120FTDTU - 204167-FGA20N120FTDTU - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - FGA20N120FTDTUFS-ND - DigiKey
    DigiKey
  • Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant Onsemi - 54AH6251 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - FGA20N120FTDTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204167-FGA20N120FTDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 447ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 137nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 298W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGA20N120FTDTU - 204167-FGA20N120FTDTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA20N120FTDTU
204167-FGA20N120FTDTU
IGBTs - Single - FGA20N120FTDTU 204167-FGA20N120FTDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204167-FGA20N120FTDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 447ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 137nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 298W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204167-FGA20N120FTDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 447ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 137nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 2V @ 15V, 20A
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
1200V 20A IGBT Transistor
279-FGA20N120FTDTU
1200V 20A IGBT Transistor 279-FGA20N120FTDTU
IGBT, 1200V, 20A, Field Stop Trench, 450-TUBE Product overview: FGA20N120FTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 20A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 20A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA20N120FTDTU can be used for catalog matching and distributor lookup.

IGBT, 1200V, 20A, Field Stop Trench, 450-TUBE Product overview: FGA20N120FTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 20A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 20A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA20N120FTDTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - FGA20N120FTDTUFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA20N120FTDTUFS-ND
Single IGBTs FGA20N120FTDTUFS-ND
IGBT Trench Field Stop 1200V 40A 298W Through Hole TO-3P

IGBT Trench Field Stop 1200V 40A 298W Through Hole TO-3P

Buy Now Datasheet
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant Onsemi - 54AH6251 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant Onsemi
54AH6251
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant Onsemi 54AH6251
IGBT, 1.2KV, 40A, 150DEG C, 298W ROHS COMPLIANT: YES

IGBT, 1.2KV, 40A, 150DEG C, 298W ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
FGA20N120FTDTU
IGBT Transistors FGA20N120FTDTU
IGBT Transistors 1200V N-Chan Trench

IGBT Transistors 1200V N-Chan Trench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA20N120FTDTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA20N120FTDTU
Discrete Semiconductor Products - Transistors - IGBTs FGA20N120FTDTU
IGBT 1200V 40A 298W TO3PN

IGBT 1200V 40A 298W TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 204167-FGA20N120FTDTU 279-FGA20N120FTDTU FGA20N120FTDTUFS-ND 54AH6251 FGA20N120FTDTU FGA20N120FTDTU
Product Name IGBTs - Single - FGA20N120FTDTU 1200V 20A IGBT Transistor Single IGBTs Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant Onsemi IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2 volts
PD 298000 milliwatts 298000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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