Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1174168-FGAF40N60SMD
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-3P-3 Full Pack
Power - Max: 115W
Reverse Recovery Time (trr): 36ns
IGBT Type: Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 870μJ (on), 260μJ (off)
Input Type: Standard
Gate Charge: 119nC
Td (on/off) @ 25°C: 12ns/92ns
Test Condition: 400V, 40A, 6 Ohm, 15V
Family Name: FGAF40N60SMD
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3PF
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 1.9V @ 15V, 40A
Alternative Parts (Cross-Reference): STGW45HF60WD; IRG4PC50SPbF; STGW45HF60WDI;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 360
IGBT Field Stop 600V 80A 115W Through Hole TO-3PF
IGBTs 600 V 80 A 79 W Product overview: FGAF40N60SMD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 80 A, 79 W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 80 A, 79 W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGAF40N60SMD can be used for catalog matching and distributor lookup.
IGBT FIELD STOP 600V 80A TO3PF
IGBT Transistors 600 V 80 A 79 W
IGBT, 600V, 80A, 175DEG C, 115W ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1174168-FGAF40N60SMD | FGAF40N60SMD-ND | 8070763 | 8070763P | 279-FGAF40N60SMD | FGAF40N60SMD | FGAF40N60SMD | 54AH8688 |
| Product Name | IGBTs - Single - FGAF40N60SMD | Single IGBTs | IGBTs | IGBTs | 600 V 80 A 79 W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, 600V, 80A, 175Deg C, 115W Rohs Compliant Onsemi |
| VCES | 600 volts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-3; SOT3 | TO-3; TO-3P-3 Full Pack | To-3pf | TO-3PF | Tube | TO-3 | ||
| Packing Method | Tube; Tube | Tube | Tube | Tube; Tube |
