IGBT NPT 600V 6A 60W Surface Mount TO-252AA
IGBT, 600V, 3A, Short Circuit Rated, 2500-REEL Product overview: FGD3N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 3A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 3A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGD3N60UNDF can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038655-FGD3N60UNDF
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 21ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 1.6nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 9A
Collector-emitter saturation voltage(Max): 2.52V @ 15V, 3A
Total Switching Energy(Ets): 52μJ (on), 30μJ (off)
Turn-on and Turn-off delay time: 5.5ns/22ns
Testing Conditions: 400V, 3A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
IGBT 600V 6A 60W DPAK
IGBT, 600V, 6A, 150DEG C, 60W ROHS COMPLIANT: YES
IGBT Transistors 600V, 3A Short Circuit Rated IGBT
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGD3N60UNDFTR-ND | FGD3N60UNDF | 279-FGD3N60UNDF | 1038655-FGD3N60UNDF | FGD3N60UNDF | 54AH8695 | FGD3N60UNDF |
| Product Name | Single IGBTs | Single IGBTs | 600V 3A IGBT Transistor | IGBTs - Single - FGD3N60UNDF | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 600V, 6A, 150Deg C, 60W Rohs Compliant Onsemi | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); TO-252, (D-Pak) | TO-3 | |||
| Packing Method | Tape Reel | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR) |
