onsemi Single IGBTs FGD3N60UNDF

Description
IGBT 600V 6A 60W DPAK
  • Single IGBTs - FGD3N60UNDF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - Single - FGD3N60UNDF - 1038655-FGD3N60UNDF - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - FGD3N60UNDFTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - IGBTs - FGD3N60UNDF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Igbt, 600V, 6A, 150Deg C, 60W Rohs Compliant Onsemi - 54AH8695 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
IGBT 600V 6A 60W DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGD3N60UNDF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGD3N60UNDF
Single IGBTs FGD3N60UNDF
IGBT 600V 6A 60W DPAK

IGBT 600V 6A 60W DPAK

Supplier's Site Datasheet
IGBTs - Single - FGD3N60UNDF - 1038655-FGD3N60UNDF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGD3N60UNDF
1038655-FGD3N60UNDF
IGBTs - Single - FGD3N60UNDF 1038655-FGD3N60UNDF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038655-FGD3N60UNDF Packaging: Reel - TR Mounting: SMD (SMT) Reverse Recovery Time (trr): 21ns IGBT Type: NPT Input Type: Standard Gate Charge: 1.6nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Maximum Current Collector: 6A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 60W Pulsed Collector Current: 9A Collector-emitter saturation voltage(Max): 2.52V @ 15V, 3A Total Switching Energy(Ets): 52μJ (on), 30μJ (off) Turn-on and Turn-off delay time: 5.5ns/22ns Testing Conditions: 400V, 3A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038655-FGD3N60UNDF
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 21ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 1.6nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 9A
Collector-emitter saturation voltage(Max): 2.52V @ 15V, 3A
Total Switching Energy(Ets): 52μJ (on), 30μJ (off)
Turn-on and Turn-off delay time: 5.5ns/22ns
Testing Conditions: 400V, 3A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single IGBTs - FGD3N60UNDFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGD3N60UNDFTR-ND
Single IGBTs FGD3N60UNDFTR-ND
IGBT NPT 600V 6A 60W Surface Mount TO-252AA

IGBT NPT 600V 6A 60W Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGD3N60UNDF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGD3N60UNDF
Discrete Semiconductor Products - Transistors - IGBTs FGD3N60UNDF
IGBT 600V 6A 60W DPAK

IGBT 600V 6A 60W DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
FGD3N60UNDF
IGBT Transistors FGD3N60UNDF
IGBT Transistors 600V, 3A Short Circuit Rated IGBT

IGBT Transistors 600V, 3A Short Circuit Rated IGBT

Buy Now Datasheet
Igbt, 600V, 6A, 150Deg C, 60W Rohs Compliant Onsemi - 54AH8695 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 600V, 6A, 150Deg C, 60W Rohs Compliant Onsemi
54AH8695
Igbt, 600V, 6A, 150Deg C, 60W Rohs Compliant Onsemi 54AH8695
IGBT, 600V, 6A, 150DEG C, 60W ROHS COMPLIANT: YES

IGBT, 600V, 6A, 150DEG C, 60W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGD3N60UNDF 1038655-FGD3N60UNDF FGD3N60UNDFTR-ND FGD3N60UNDF FGD3N60UNDF 54AH8695
Product Name Single IGBTs IGBTs - Single - FGD3N60UNDF Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors Igbt, 600V, 6A, 150Deg C, 60W Rohs Compliant Onsemi
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3
VCE(on) 2.52 volts
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