IGBTs 650V, 40A Field Stop IGBT Product overview: FGA40N65SMD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 40A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 40A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA40N65SMD can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040285-FGA40N65SMD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 42ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 119nC
Family Name: FGA40N65SMD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 349W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 40A
Total Switching Energy(Ets): 820μJ (on), 260μJ (off)
Turn-on and Turn-off delay time: 12ns/92ns
Testing Conditions: 400V, 40A, 6 Ohm, 15V
Alternative Parts (Cross-Reference): STGWT60H65FB; STGWT40H65FB; IKW30N65EL5XKSA1;
Introduction Date: October 27, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 450
IGBT Field Stop 650V 80A 349W Through Hole TO-3PN
IGBT, 650V, 80A, 175DEG C, 349W ROHS COMPLIANT: YES
IGBT Transistors 650V, 40A Field Stop IGBT
IGBT FIELD STOP 650V 80A TO3PN
IGBT FIELD STOP 650V 80A TO3PN
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGA40N65SMD | 040285-FGA40N65SMD | FGA40N65SMDOS-ND | 54AH8692 | FGA40N65SMD | FGA40N65SMD | FGA40N65SMD |
| Product Name | 650V 40A IGBT Transistor | IGBTs - Single - FGA40N65SMD | Single IGBTs | Igbt, 650V, 80A, 175Deg C, 349W Rohs Compliant Onsemi | IGBT Transistors | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 349 milliwatts | 349000 milliwatts | |||||
| Package Type | Tube | TO-3; SOT3; TO-3PN | TO-3; TO-3P-3, SC-65-3 | TO-3 | TO-3; TO-3P-3, SC-65-3 | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube |