Microchip Technology, Inc. Power IGBT Transistor APT200GN60B2G

Description
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
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Description
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
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Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APT200GN60B2G - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT200GN60B2G
Power IGBT Transistor APT200GN60B2G
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Supplier's Site
Singapore
600V 283A 682W IGBT Transistor
279-APT200GN60B2G
600V 283A 682W IGBT Transistor 279-APT200GN60B2G
IGBT 600V 283A 682W TO247 Product overview: APT200GN60B2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 283A, 682W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 283A, 682W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT200GN60B2G can be used for catalog matching and distributor lookup.

IGBT 600V 283A 682W TO247 Product overview: APT200GN60B2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 283A, 682W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 283A, 682W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT200GN60B2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - APT200GN60B2G-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
APT200GN60B2G-ND
Single IGBTs APT200GN60B2G-ND
IGBT Trench Field Stop 600V 283A 682W Through Hole

IGBT Trench Field Stop 600V 283A 682W Through Hole

Buy Now Datasheet
Single IGBTs - APT200GN60B2G - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
APT200GN60B2G
Single IGBTs APT200GN60B2G
IGBT 600V 283A 682W TO247

IGBT 600V 283A 682W TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT200GN60B2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT200GN60B2G
Discrete Semiconductor Products - Transistors - IGBTs APT200GN60B2G
IGBT 600V 283A 682W TO247

IGBT 600V 283A 682W TO247

Supplier's Site

Technical Specifications

  Richardson RFPD ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT200GN60B2G 279-APT200GN60B2G APT200GN60B2G-ND APT200GN60B2G APT200GN60B2G
Product Name Power IGBT Transistor 600V 283A 682W IGBT Transistor Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Package Type T-Max™ Tube TO-247; TO-247-3 TO-247; TO-247-3
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