INSULATED GATE BIPOLAR TRANSISTO
IGBT Trench Field Stop 650V 120A 306W Through Hole TO-3PN
IGBT, 650 V, 60 A Field Stop Trench
IGBT Transistors 650V FS Gen3 Trench IGBT
IGBT TRENCH/FS 650V 120A TO3PN
| ODG (Origin Data Global) | DigiKey | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA6065ADF | FGA6065ADF-ND | FGA6065ADF | FGA6065ADF | FGA6065ADF |
| Product Name | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
