onsemi IGBTs - Single - FGA15N120FTDTU FGA15N120FTDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204166-FGA15N120FTDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 575ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 220W Pulsed Collector Current: 45A Collector-emitter saturation voltage(Max): 2V @ 15V, 15A Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204166-FGA15N120FTDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 575ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 220W Pulsed Collector Current: 45A Collector-emitter saturation voltage(Max): 2V @ 15V, 15A Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGA15N120FTDTU - 204166-FGA15N120FTDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA15N120FTDTU
204166-FGA15N120FTDTU
IGBTs - Single - FGA15N120FTDTU 204166-FGA15N120FTDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204166-FGA15N120FTDT U Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 575ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 220W Pulsed Collector Current: 45A Collector-emitter saturation voltage(Max): 2V @ 15V, 15A Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204166-FGA15N120FTDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 575ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 100nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 220W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 2V @ 15V, 15A
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - FGA15N120FTDTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA15N120FTDTU-ND
Single IGBTs FGA15N120FTDTU-ND
IGBT Trench Field Stop 1200V 30A 220W Through Hole TO-3P

IGBT Trench Field Stop 1200V 30A 220W Through Hole TO-3P

Buy Now Datasheet
Single IGBTs - FGA15N120FTDTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGA15N120FTDTU
Single IGBTs FGA15N120FTDTU
IGBT, 30A, 1200V, N-CHANNEL

IGBT, 30A, 1200V, N-CHANNEL

Supplier's Site Datasheet
Single IGBTs - FGA15N120FTDTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGA15N120FTDTU
Single IGBTs FGA15N120FTDTU
IGBT 1200V 30A 220W TO3PN

IGBT 1200V 30A 220W TO3PN

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA15N120FTDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA15N120FTDTU
Discrete Semiconductor Products - Transistors - IGBTs FGA15N120FTDTU
IGBT 1200V 30A 220W TO3PN

IGBT 1200V 30A 220W TO3PN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 204166-FGA15N120FTDTU FGA15N120FTDTU-ND FGA15N120FTDTU FGA15N120FTDTU
Product Name IGBTs - Single - FGA15N120FTDTU Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2 volts
PD 220000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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