IGBT 300V 75A 463W TO-247 Through Hole Product overview: FGH50N3 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 300V, 75A, 463W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 300V, 75A, 463W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH50N3 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067189-FGH50N3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 180nC
Family Name: FGH50N3
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Maximum Power Dissipation: 463W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 1.4V @ 15V, 30A
Total Switching Energy(Ets): 130μJ (on), 92μJ (off)
Turn-on and Turn-off delay time: 20ns/135ns
Testing Conditions: 180V, 30A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): IXGH120N30C3; IXGH120N30B3; IXGH60N30C3;
Introduction Date: September 16, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 450
IGBT PT 300V 75A 463W Through Hole TO-247-3
IGBT PT 300V 75A TO247-3
SINGLE IGBT, 300V, 75A; Continuous Collector Current:75A; Power Dissipation:463W; Collector Emitter Voltage Max:300V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 1 - Unlimited RoHS Compliant: Yes
IGBT Transistors 300V PT N-Channel
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGH50N3 | 067189-FGH50N3 | FGH50N3-ND | FGH50N3 | 58K1490 | FGH50N3 |
| Product Name | Through-Hole 300V 75A 463W IGBT Transistor | IGBTs - Single - FGH50N3 | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Single Igbt, 300V, 75A; Continuous Collector Current Onsemi | IGBT Transistors |
| PD | 463000 milliwatts | 463000 milliwatts | 463000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | |
| VCE(on) | 1.4 volts |
