Microchip Technology, Inc. Power IGBT Transistor APT35GN120L2DQ2G

Description
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
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Description
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
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Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APT35GN120L2DQ2G - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT35GN120L2DQ2G
Power IGBT Transistor APT35GN120L2DQ2G
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.

Supplier's Site
Single IGBTs APT35GN120L2DQ2G
IGBT 1200V 94A 379W TO264

IGBT 1200V 94A 379W TO264

Supplier's Site Datasheet
Single IGBTs - APT35GN120L2DQ2G-ND - DigiKey
Thief River Falls, MN, United States
IGBT NPT, Trench Field Stop 1200V 94A 379W Through Hole

IGBT NPT, Trench Field Stop 1200V 94A 379W Through Hole

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT35GN120L2DQ2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT35GN120L2DQ2G
Discrete Semiconductor Products - Transistors - IGBTs APT35GN120L2DQ2G
IGBT 1200V 94A 379W TO264

IGBT 1200V 94A 379W TO264

Supplier's Site

Technical Specifications

  Richardson RFPD ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT35GN120L2DQ2G APT35GN120L2DQ2G APT35GN120L2DQ2G-ND APT35GN120L2DQ2G
Product Name Power IGBT Transistor Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Package Type TO-264 TO-264-3, TO-264AA TO-264-3, TO-264AA
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