onsemi Single IGBTs FGA30T65SHD

Description
IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGA30T65SHD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA30T65SHD-ND
Single IGBTs FGA30T65SHD-ND
IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN

IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN

Buy Now Datasheet
Singapore
650 V 30 A IGBT Transistor
279-FGA30T65SHD
650 V 30 A IGBT Transistor 279-FGA30T65SHD
IGBTs IGBT, 650 V, 30 A Field Stop Trench Product overview: FGA30T65SHD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA30T65SHD can be used for catalog matching and distributor lookup.

IGBTs IGBT, 650 V, 30 A Field Stop Trench Product overview: FGA30T65SHD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA30T65SHD can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1017563-FGA30T65SHD - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1017563-FGA30T65SHD
Discrete Semiconductor Products - Transistors - IGBTs - Single 1017563-FGA30T65SHD
Win Source Part Number: 1017563-FGA30T65SHD Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Package: Bulk Standard Package: 1 Power - Max: 238 W Reverse Recovery Time (trr): 31.8 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Switching Energy: 598µJ (on), 167µJ (off) Input Type: Standard Gate Charge: 54.7 nC Td (on/off) @ 25°C: 14.4ns/52.8ns Test Condition: 400V, 30A, 6Ohm, 15V Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. HTSUS: 8542.39.0001 Mfr: Fairchild Semiconductor Other Names: 2156-FGA30T65SHD,FAI FSCFGA30T65SHD Base Product Number: FGA30T65

Win Source Part Number: 1017563-FGA30T65SHD
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Bulk
Standard Package: 1
Power - Max: 238 W
Reverse Recovery Time (trr): 31.8 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Switching Energy: 598µJ (on), 167µJ (off)
Input Type: Standard
Gate Charge: 54.7 nC
Td (on/off) @ 25°C: 14.4ns/52.8ns
Test Condition: 400V, 30A, 6Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
HTSUS: 8542.39.0001
Mfr: Fairchild Semiconductor
Other Names: 2156-FGA30T65SHD,FAIFSCFGA30T65SHD
Base Product Number: FGA30T65

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGA30T65SHD
IGBT Transistors FGA30T65SHD
IGBT Transistors FS3TIGBT TO3PN 30A 650V

IGBT Transistors FS3TIGBT TO3PN 30A 650V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA30T65SHD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA30T65SHD
Discrete Semiconductor Products - Transistors - IGBTs FGA30T65SHD
IGBT TRENCH/FS 650V 60A TO3PN

IGBT TRENCH/FS 650V 60A TO3PN

Supplier's Site
Field Stop Trench Igbt, 650V/60A, To-3Pn; Dc Collector Current Onsemi - 34AC1495 - Newark, An Avnet Company
Chicago, IL, United States
Field Stop Trench Igbt, 650V/60A, To-3Pn; Dc Collector Current Onsemi
34AC1495
Field Stop Trench Igbt, 650V/60A, To-3Pn; Dc Collector Current Onsemi 34AC1495
FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PN; No. of RoHS Compliant: Yes

FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PN; No. of RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGA30T65SHD-ND 279-FGA30T65SHD 1017563-FGA30T65SHD FGA30T65SHD FGA30T65SHD 34AC1495
Product Name Single IGBTs 650 V 30 A IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs - Single IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Field Stop Trench Igbt, 650V/60A, To-3Pn; Dc Collector Current Onsemi
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-3; TO-3P-3, SC-65-3 Tube TO-3; SOT3 TO-3
Packing Method Tube Tube Tube; Tube
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