Win Source Part Number: 1017563-FGA30T65SHD
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Power - Max: 238 W
Reverse Recovery Time (trr): 31.8 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Switching Energy: 598µJ (on), 167µJ (off)
Input Type: Standard
Gate Charge: 54.7 nC
Td (on/off) @ 25°C: 14.4ns/52.8ns
Test Condition: 400V, 30A, 6Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
HTSUS: 8542.39.0001
Mfr: Fairchild Semiconductor
Other Names: 2156-FGA30T65SHD,FAI
Base Product Number: FGA30T65
IGBTs IGBT, 650 V, 30 A Field Stop Trench Product overview: FGA30T65SHD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA30T65SHD can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN
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IGBT Transistors FS3TIGBT TO3PN 30A 650V
FIELD STOP TRENCH IGBT, 650V/60A, TO-3PN; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3PN; No. of RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1017563-FGA30T65SHD | 279-FGA30T65SHD | FGA30T65SHD-ND | FGA30T65SHD | FGA30T65SHD | 34AC1495 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single | 650 V 30 A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Field Stop Trench Igbt, 650V/60A, To-3Pn; Dc Collector Current Onsemi |
| VCES | 650 volts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-3; SOT3 | Tube | TO-3; TO-3P-3, SC-65-3 | TO-3 |