Microchip Technology, Inc. Single IGBTs APT35GP120BG

Description
IGBT PT 1200V 96A 543W Through Hole TO-247 [B]
Request a Quote Datasheet
Description
IGBT PT 1200V 96A 543W Through Hole TO-247 [B]
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - APT35GP120BG-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
APT35GP120BG-ND
Single IGBTs APT35GP120BG-ND
IGBT PT 1200V 96A 543W Through Hole TO-247 [B]

IGBT PT 1200V 96A 543W Through Hole TO-247 [B]

Buy Now Datasheet
Power IGBT Transistor - APT35GP120BG - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT35GP120BG
Power IGBT Transistor APT35GP120BG
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - APT35GP120BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT35GP120BG
Discrete Semiconductor Products - Transistors - IGBTs APT35GP120BG
IGBT 1200V 96A 543W TO247

IGBT 1200V 96A 543W TO247

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT35GP120BG-ND APT35GP120BG APT35GP120BG
Product Name Single IGBTs Power IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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