onsemi Single IGBTs FGH40N60SFDTU

Description
IGBT Field Stop 600V 80A 290W Through Hole TO-247-3
Request a Quote Datasheet
Description
IGBT Field Stop 600V 80A 290W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGH40N60SFDTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH40N60SFDTU-ND
Single IGBTs FGH40N60SFDTU-ND
IGBT Field Stop 600V 80A 290W Through Hole TO-247-3

IGBT Field Stop 600V 80A 290W Through Hole TO-247-3

Buy Now Datasheet
IGBTs - 7599267P - RS Components, Ltd.
Corby, Northants, United Kingdom
Transistor IGBT N-Ch 600V 80A TO247

Transistor IGBT N-Ch 600V 80A TO247

Supplier's Site
IGBTs - 7599267 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
7599267
IGBTs 7599267
Transistor IGBT N-Ch 600V 80A TO247

Transistor IGBT N-Ch 600V 80A TO247

Supplier's Site
IGBTs - 1241334 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1241334
IGBTs 1241334
Transistor IGBT N-Ch 600V 80A TO247

Transistor IGBT N-Ch 600V 80A TO247

Supplier's Site
Single IGBTs - FGH40N60SFDTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGH40N60SFDTU
Single IGBTs FGH40N60SFDTU
IGBT FIELD STOP 600V 80A TO247-3

IGBT FIELD STOP 600V 80A TO247-3

Supplier's Site Datasheet
IGBTs - Single - FGH40N60SFDTU - 001170-FGH40N60SFDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH40N60SFDTU
001170-FGH40N60SFDTU
IGBTs - Single - FGH40N60SFDTU 001170-FGH40N60SFDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001170-FGH40N60SFDTU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 45ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 120nC Family Name: FGH40N60SFD Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 290W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 40A Total Switching Energy(Ets): 1.13mJ (on), 310μJ (off) Turn-on and Turn-off delay time: 25ns/115ns Testing Conditions: 400V, 40A, 10 Ohm, 15V Alternative Parts (Cross-Reference): FGH40N60SFDTU-F085; STGWA40H65DHFB2; STGW60H65DFB; STGW40V60F; Introduction Date: April 21, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001170-FGH40N60SFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 45ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 120nC
Family Name: FGH40N60SFD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 40A
Total Switching Energy(Ets): 1.13mJ (on), 310μJ (off)
Turn-on and Turn-off delay time: 25ns/115ns
Testing Conditions: 400V, 40A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): FGH40N60SFDTU-F085; STGWA40H65DHFB2; STGW60H65DFB; STGW40V60F;
Introduction Date: April 21, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 450

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH40N60SFDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH40N60SFDTU
Discrete Semiconductor Products - Transistors - IGBTs FGH40N60SFDTU
IGBT FIELD STOP 600V 80A TO247-3

IGBT FIELD STOP 600V 80A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGH40N60SFDTU
IGBT Transistors FGH40N60SFDTU
IGBT Transistors 600V 40A Field Stop

IGBT Transistors 600V 40A Field Stop

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
FGH40N60SFDTU
Triode/MOS Tube/Transistor >> IGBTs FGH40N60SFDTU
290W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS

290W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey RS Components, Ltd. RS Components, Ltd. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGH40N60SFDTU-ND 7599267P 7599267 FGH40N60SFDTU 001170-FGH40N60SFDTU FGH40N60SFDTU FGH40N60SFDTU FGH40N60SFDTU
Product Name Single IGBTs IGBTs IGBTs Single IGBTs IGBTs - Single - FGH40N60SFDTU Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors Triode/MOS Tube/Transistor >> IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; TO-247 TO-247; To-247 TO-247; TO-247-3 TO-247; SOT3; TO-247 120 A TO-247
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
Structure Field Stop
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