IGBT Trench Field Stop 1200V 40A 348W Through Hole TO-3P
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204168-FGA20S120M
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 208nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 348W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 1.85V @ 15V, 20A
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
IGBT, 40A, 1200V, N-CHANNEL Product overview: FGA20S120M from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 1200V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 40A, 1200V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA20S120M can be used for catalog matching and distributor lookup.
IGBT 1200V 40A 348W TO3PN
SHORTED ANODE IGBT, 1200V, 40A, TO-3; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:348W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA20S120M-ND | 204168-FGA20S120M | 279-FGA20S120M | FGA20S120M | 92R5604 |
| Product Name | Single IGBTs | IGBTs - Single - FGA20S120M | N-Channel 40A 1200V IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Shorted Anode Igbt, 1200V, 40A, To-3; Continuous Collector Current Onsemi |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | Bulk | TO-3 | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Bulk | Tube; Tube |
