IGBT 1200V 69A 417W TO247
IGBT PT 1200V 69A 417W Through Hole TO-247 [B]
The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.
IGBT 1200V 69A 417W TO247
| ODG (Origin Data Global) | DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT25GP120BDQ1G | APT25GP120BDQ1G-ND | APT25GP120BDQ1G | APT25GP120BDQ1G |
| Product Name | Single IGBTs | Single IGBTs | Power IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
