Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204170-FGA50N100BNTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 75ns
IGBT Type: NPT and Trench
Input Type: Standard
Gate Charge: 257nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 156W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A
Turn-on and Turn-off delay time: 34ns/243ns
Testing Conditions: 600V, 60A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 450
IGBT, 1000V, NPT Trench, 450-TUBE Product overview: FGA50N100BNTD2 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1000V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA50N100BNTD2 can be used for catalog matching and distributor lookup.
IGBT 1000V 50A 156W TO3P
IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3P
IGBT 1000V 50A 156W TO3P
IGBT, SINGLE, 1KV, 50A, TO-3P; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:156W; Collector Emitter Voltage V(br)ceo:1kV; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating RoHS Compliant: Yes
IGBT 1000V 50A 156W TO3P
IGBT Transistors N-ch / 50A 1000V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 204170-FGA50N100BNTD2 | 279-FGA50N100BNTD2 | FGA50N100BNTD2 | FGA50N100BNTD2-ND | FGA50N100BNTD2 | 57AC1889 | 598-FGA50N100BNTD2 | FGA50N100BNTD2 |
| Product Name | IGBTs - Single - FGA50N100BNTD2 | 1000V IGBT Transistor | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 1Kv, 50A, To-3P; Dc Collector Current Onsemi | IGBT 1000V 50A 156W TO3P | IGBT Transistors |
| VCE(on) | 2.9 volts | 1.5 volts | ||||||
| PD | 156000 milliwatts | 156000 milliwatts | 156000 milliwatts | 156000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-3; SOT3; TO-3P | TO-3; TO-3P-3, SC-65-3 | TO-3; TO-3P-3, SC-65-3 | TO-3 | ||||
| Packing Method | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube |
