Bourns, Inc. Single IGBTs BIDW40N65H5

The BIDW40N65H5 is a 650 V, 40 A insulated gate bipolar transistor (IGBT) designed for switched-mode power supplies, uninterruptible power sources, and inverters. It is packaged in a TO-247-3L case with a maximum operating junction temperature of 175 °C. The device features trench-gate field-stop technology, resulting in a typical collector-emitter saturation voltage of 1.65 V at 25 °C and 1.85 V at 150 °C. It has a total gate charge of 111 nC, turn-off switching energy of 0.52 mJ, and a thermal resistance from junction to case of 0.5 °C/W for the IGBT. The part is RoHS compliant.