Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001160-FGA25N120ANTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 350ns
IGBT Type: NPT and Trench
Input Type: Standard
Gate Charge: 200nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 312W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 2.65V @ 15V, 50A
Total Switching Energy(Ets): 4.1mJ (on), 960μJ (off)
Turn-on and Turn-off delay time: 50ns/190ns
Testing Conditions: 600V, 25A, 10 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 450
IGBT NPT and Trench 1200V 50A 312W Through Hole TO-3P
1200V 50A N-CH IGBT Transistor, TO-3PN Product overview: FGA25N120ANTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA25N120ANTDTU can be used for catalog matching and distributor lookup.
IGBT,NPT,TO-3PN; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:312W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
IGBT Transistors Copak Discrete
IGBT NPT/TRENCH 1200V 50A TO3P
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 50A I(C), 1200V V(BR)CES, N-CHANNEL, TO-3PN. FREE 2 YEAR RADWELL WARRANTY
IGBT NPT/TRENCH 1200V 50A TO3P
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 001160-FGA25N120ANTDTU | FGA25N120ANTDTU-ND | 279-FGA25N120ANTDTU | 96K9932 | FGA25N120ANTDTU | FGA25N120ANTDTU | 16130912 | FGA25N120ANTDTU |
| Product Name | IGBTs - Single - FGA25N120ANTDTU | Single IGBTs | 1200V 50A IGBT Transistor | Igbt,npt,to-3Pn; Continuous Collector Current Onsemi | IGBT Transistors | Single IGBTs | IGBT | Discrete Semiconductor Products - Transistors - IGBTs |
| VCE(on) | 2.65 volts | |||||||
| PD | 312000 milliwatts | 312000 milliwatts | 312000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
