onsemi 1200V 50A 313W IGBT Transistor FGA25N120FTD

IGBT 1200V 50A 313W TO3P Product overview: FGA25N120FTD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 50A, 313W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 50A, 313W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA25N120FTD can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038635-FGA25N120FTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 770ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 160nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 313W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2V @ 15V, 25A
Total Switching Energy(Ets): 340μJ (on), 900μJ (off)
Turn-on and Turn-off delay time: 48ns/210ns
Testing Conditions: 600V, 25A, 15 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-3P