onsemi IGBTs - Single - FGA25N120FTD FGA25N120FTD

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038635-FGA25N120FTD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 770ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 160nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 313W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2V @ 15V, 25A Total Switching Energy(Ets): 340μJ (on), 900μJ (off) Turn-on and Turn-off delay time: 48ns/210ns Testing Conditions: 600V, 25A, 15 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038635-FGA25N120FTD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 770ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 160nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 313W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2V @ 15V, 25A Total Switching Energy(Ets): 340μJ (on), 900μJ (off) Turn-on and Turn-off delay time: 48ns/210ns Testing Conditions: 600V, 25A, 15 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGA25N120FTD - 1038635-FGA25N120FTD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA25N120FTD
1038635-FGA25N120FTD
IGBTs - Single - FGA25N120FTD 1038635-FGA25N120FTD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038635-FGA25N120FTD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 770ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 160nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Maximum Current Collector: 50A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 313W Pulsed Collector Current: 75A Collector-emitter saturation voltage(Max): 2V @ 15V, 25A Total Switching Energy(Ets): 340μJ (on), 900μJ (off) Turn-on and Turn-off delay time: 48ns/210ns Testing Conditions: 600V, 25A, 15 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038635-FGA25N120FTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 770ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 160nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 313W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2V @ 15V, 25A
Total Switching Energy(Ets): 340μJ (on), 900μJ (off)
Turn-on and Turn-off delay time: 48ns/210ns
Testing Conditions: 600V, 25A, 15 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - FGA25N120FTD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGA25N120FTD-ND
Single IGBTs FGA25N120FTD-ND
IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-3P

IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA25N120FTD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA25N120FTD
Discrete Semiconductor Products - Transistors - IGBTs FGA25N120FTD
IGBT 1200V 50A 313W TO3P

IGBT 1200V 50A 313W TO3P

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1038635-FGA25N120FTD FGA25N120FTD-ND FGA25N120FTD
Product Name IGBTs - Single - FGA25N120FTD Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2 volts
PD 313000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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