IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-3P
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038635-FGA25N120FTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 770ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 160nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 313W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2V @ 15V, 25A
Total Switching Energy(Ets): 340μJ (on), 900μJ (off)
Turn-on and Turn-off delay time: 48ns/210ns
Testing Conditions: 600V, 25A, 15 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
IGBT 1200V 50A 313W TO3P
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGA25N120FTD-ND | 1038635-FGA25N120FTD | FGA25N120FTD |
| Product Name | Single IGBTs | IGBTs - Single - FGA25N120FTD | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3PN | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
