The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher Vce(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching Power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive Vce(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
IGBT NPT 600V 93A 415W Through Hole TO-247 [B]
IGBT 600V 93A 415W TO247
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT50GS60BRG | APT50GS60BRG-ND | APT50GS60BRG |
| Product Name | Power IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-247; TO-247 | TO-247; TO-247-3 |
