Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
IGBT Trench Field Stop 1200V 200A 833W Through Hole
IGBT 1200V 200A 833W TMAX
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT75GN120B2G | APT75GN120B2G-ND | APT75GN120B2G |
| Product Name | Power IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | T-Max™ | TO-247; TO-247-3 Variant |
