onsemi 600V 5A IGBT Transistor FGB5N60UNDF

Description
IGBT, 600V, 5A, Short Circuit Rated, 800-REEL Product overview: FGB5N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 5A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB5N60UNDF can be used for catalog matching and distributor lookup.
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Description
IGBT, 600V, 5A, Short Circuit Rated, 800-REEL Product overview: FGB5N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 5A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB5N60UNDF can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
600V 5A IGBT Transistor
279-FGB5N60UNDF
600V 5A IGBT Transistor 279-FGB5N60UNDF
IGBT, 600V, 5A, Short Circuit Rated, 800-REEL Product overview: FGB5N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 5A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB5N60UNDF can be used for catalog matching and distributor lookup.

IGBT, 600V, 5A, Short Circuit Rated, 800-REEL Product overview: FGB5N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 5A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB5N60UNDF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - FGB5N60UNDF - 204173-FGB5N60UNDF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGB5N60UNDF
204173-FGB5N60UNDF
IGBTs - Single - FGB5N60UNDF 204173-FGB5N60UNDF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204173-FGB5N60UNDF Packaging: Tube/Rail Mounting: SMD (SMT) Reverse Recovery Time (trr): 35ns IGBT Type: NPT Input Type: Standard Gate Charge: 12.1nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263AB (D2PAK) Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 73.5W Pulsed Collector Current: 15A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 5A Total Switching Energy(Ets): 80μJ (on), 70μJ (off) Turn-on and Turn-off delay time: 5.4ns/25.4ns Testing Conditions: 400V, 5A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204173-FGB5N60UNDF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 35ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 12.1nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263AB (D2PAK)
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 73.5W
Pulsed Collector Current: 15A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 5A
Total Switching Energy(Ets): 80μJ (on), 70μJ (off)
Turn-on and Turn-off delay time: 5.4ns/25.4ns
Testing Conditions: 400V, 5A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single IGBTs - FGB5N60UNDF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGB5N60UNDF-ND
Single IGBTs FGB5N60UNDF-ND
IGBT NPT 600V 10A 73.5W Surface Mount D²PAK (TO-263)

IGBT NPT 600V 10A 73.5W Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGB5N60UNDF
IGBT Transistors FGB5N60UNDF
IGBT Transistors 600V 5A NPT IGBT

IGBT Transistors 600V 5A NPT IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGB5N60UNDF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGB5N60UNDF
Discrete Semiconductor Products - Transistors - IGBTs FGB5N60UNDF
IGBT NPT 600V 10A D2PAK

IGBT NPT 600V 10A D2PAK

Supplier's Site
Igbt, Single, 600V, 10A, To-263Ab; Dc Collector Current Onsemi - 57AC1890 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 600V, 10A, To-263Ab; Dc Collector Current Onsemi
57AC1890
Igbt, Single, 600V, 10A, To-263Ab; Dc Collector Current Onsemi 57AC1890
IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:73.5W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263AB; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:73.5W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263AB; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-FGB5N60UNDF 204173-FGB5N60UNDF FGB5N60UNDF-ND FGB5N60UNDF FGB5N60UNDF 57AC1890
Product Name 600V 5A IGBT Transistor IGBTs - Single - FGB5N60UNDF Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Igbt, Single, 600V, 10A, To-263Ab; Dc Collector Current Onsemi
PD 73500 milliwatts 73500 milliwatts 73500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
VCE(on) 2.4 volts
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