IGBT, 600V, 5A, Short Circuit Rated, 800-REEL Product overview: FGB5N60UNDF from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 5A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB5N60UNDF can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204173-FGB5N60UNDF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 35ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 12.1nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263AB (D2PAK)
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 73.5W
Pulsed Collector Current: 15A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 5A
Total Switching Energy(Ets): 80μJ (on), 70μJ (off)
Turn-on and Turn-off delay time: 5.4ns/25.4ns
Testing Conditions: 400V, 5A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 800
IGBT NPT 600V 10A 73.5W Surface Mount D²PAK (TO-263)
IGBT Transistors 600V 5A NPT IGBT
IGBT NPT 600V 10A D2PAK
IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:73.5W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263AB; No. of Pins:3Pins; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGB5N60UNDF | 204173-FGB5N60UNDF | FGB5N60UNDF-ND | FGB5N60UNDF | FGB5N60UNDF | 57AC1890 |
| Product Name | 600V 5A IGBT Transistor | IGBTs - Single - FGB5N60UNDF | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 600V, 10A, To-263Ab; Dc Collector Current Onsemi |
| PD | 73500 milliwatts | 73500 milliwatts | 73500 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| VCE(on) | 2.4 volts |