IGBTs 600V/60A Field Stop IGBT ver. 2 Product overview: FGH60N60SMD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH60N60SMD can be used for catalog matching and distributor lookup.
Transistor IGBT N-Ch 600V 120A TO247
Transistor IGBT N-Ch 600V 120A TO247
Transistor IGBT N-Ch 600V 120A TO247
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 087618-FGH60N60SMD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 39ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 189nC
Family Name: FGH60N60SMD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 120A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 600W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 60A
Total Switching Energy(Ets): 1.26mJ (on), 450μJ (off)
Turn-on and Turn-off delay time: 18ns/104ns
Testing Conditions: 400V, 60A, 3 Ohm, 15V
Alternative Parts (Cross-Reference): FGH60N60SMD_F085; STGY50NB60HD; STGW50NB60M;
Introduction Date: May 01, 2010
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 450
IGBT FIELD STOP 600V 120A TO247
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IGBT Transistors 600V/60A Field Stop IGBT ver. 2
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| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGH60N60SMD | 7394945 | 7394945P | 087618-FGH60N60SMD | FGH60N60SMD | FGH60N60SMD-ND | FGH60N60SMD | 41T0516 | FGH60N60SMD | FGH60N60SMD |
| Product Name | 600V 60A IGBT Transistor | IGBTs | IGBTs | IGBTs - Single - FGH60N60SMD | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt,n Channel,fast,w/dio,600V,120A,to247; Continuous Collector Current Onsemi | IGBT Transistors | Triode/MOS Tube/Transistor >> IGBTs |
| PD | 600 milliwatts | 600000 milliwatts | 600000 milliwatts | 600000 milliwatts | ||||||
| Package Type | Tube | TO-247; To-247ab | TO-247; TO-247AB | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | TO-247 | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube | Tube; Tube | ||||||
| Polarity | N-Channel | N-Channel |
