Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
IGBT 900V 145A 625W TO247 Product overview: APT80GA90B from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 145A, 625W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 900V, 145A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT80GA90B can be used for catalog matching and distributor lookup.
IGBT PT 900V 145A 625W Through Hole TO-247 [B]
IGBT 900V 145A 625W TO247
| Richardson RFPD | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT80GA90B | 279-APT80GA90B | APT80GA90B-ND | APT80GA90B |
| Product Name | Power IGBT Transistor | 900V 145A 625W IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| Package Type | TO-247; TO-247 | Tube | TO-247; TO-247-3 |
