onsemi 1000V IGBT Transistor FGA50N100BNTDTU

IGBT, 1000V, NPT Trench, 450-TUBE Product overview: FGA50N100BNTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1000V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA50N100BNTDTU can be used for catalog matching and distributor lookup.

IGBT 1000V 50A 156W TO3P

IGBT NPT and Trench 1000V 50A 156W Through Hole TO-3P

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204171-FGA50N100BNTDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 1.5μs
IGBT Type: NPT and Trench
Input Type: Standard
Gate Charge: 275nC
Family Name: FGA50N100BNTD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 156W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A
Alternative Parts (Cross-Reference): STGWT20IH125DF; STGWT28IH125DF; RGS50TSX2HRC11; TSG40N120CE C0;
Introduction Date: December 22, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 450