IGBT PT 1200V 113A 625W Through Hole
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.
IGBT 1200V 113A 625W TMAX Product overview: APT45GP120B2DQ2G from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 113A, 625W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 113A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-APT45GP120B2DQ2G
IGBT 1200V 113A 625W TMAX
| DigiKey | Richardson RFPD | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | APT45GP120B2DQ2G-ND | APT45GP120B2DQ2G | 279-APT45GP120B2DQ2G | APT45GP120B2DQ2G |
| Product Name | Single IGBTs | Power IGBT Transistor | 1200V 113A 625W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
