onsemi Single IGBTs AFGY100T65SPD

Description
IGBT Trench Field Stop 650V 120A 660W Through Hole TO-247-3
  • Single IGBTs - 488-AFGY100T65SPD-ND - DigiKey
    DigiKey
  • Single IGBTs - AFGY100T65SPD - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1337863-AFGY100T65SPD - Win Source Electronics
    Win Source Electronics
  • Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant Onsemi - 12AJ6777 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - AFGY100T65SPD - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
IGBT Trench Field Stop 650V 120A 660W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 488-AFGY100T65SPD-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
488-AFGY100T65SPD-ND
Single IGBTs 488-AFGY100T65SPD-ND
IGBT Trench Field Stop 650V 120A 660W Through Hole TO-247-3

IGBT Trench Field Stop 650V 120A 660W Through Hole TO-247-3

Buy Now Datasheet
Single IGBTs - AFGY100T65SPD - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
AFGY100T65SPD
Single IGBTs AFGY100T65SPD
IGBT - 650 V 100 A FS3 FOR EV TR

IGBT - 650 V 100 A FS3 FOR EV TR

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1337863-AFGY100T65SPD - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1337863-AFGY100T65SPD
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1337863-AFGY100T65SPD
Win Source Part Number: 1337863-AFGY100T65SP D Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Series: Automotive, AEC-Q101 Package: Tube Standard Package: 30 Power - Max: 660 W Reverse Recovery Time (trr): 105 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Switching Energy: 5.1mJ (on) , 2.7mJ (off) Input Type: Standard Gate Charge: 109 nC Test Condition: 400V, 100A, 5Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 34 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: AFGY100 Current - Collector (Ic) (Max): 120 A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A Td (on/off) @ 25°C: 36ns/78ns

Win Source Part Number: 1337863-AFGY100T65SPD
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Power - Max: 660 W
Reverse Recovery Time (trr): 105 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Switching Energy: 5.1mJ (on) , 2.7mJ (off)
Input Type: Standard
Gate Charge: 109 nC
Test Condition: 400V, 100A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 34 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: AFGY100
Current - Collector (Ic) (Max): 120 A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
Td (on/off) @ 25°C: 36ns/78ns

Buy Now Datasheet
Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant Onsemi - 12AJ6777 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant Onsemi
12AJ6777
Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant Onsemi 12AJ6777
IGBT, 650V, 100A, 175DEG C, 660W ROHS COMPLIANT: YES

IGBT, 650V, 100A, 175DEG C, 660W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - AFGY100T65SPD - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
AFGY100T65SPD
Discrete Semiconductor Products - Transistors - IGBTs AFGY100T65SPD
IGBT - 650 V 100 A FS3 FOR EV TR

IGBT - 650 V 100 A FS3 FOR EV TR

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 488-AFGY100T65SPD-ND AFGY100T65SPD 1337863-AFGY100T65SPD 12AJ6777 AFGY100T65SPD
Product Name Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3 TO-3 Automotive
Packing Method Tube Tube; Tube
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