IGBT Trench Field Stop 650V 120A 660W Through Hole TO-247-3
IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3, 450-TUBE Product overview: AFGY100T65SPD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 100 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 100 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-AFGY100T65SPD can be used for catalog matching and distributor lookup.
Win Source Part Number: 1337863-AFGY100T65SP
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Series: Automotive, AEC-Q101
Package: Tube
Standard Package: 30
Power - Max: 660 W
Reverse Recovery Time (trr): 105 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Switching Energy: 5.1mJ (on) , 2.7mJ (off)
Input Type: Standard
Gate Charge: 109 nC
Test Condition: 400V, 100A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 34 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: AFGY100
Current - Collector (Ic) (Max): 120 A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
Td (on/off) @ 25°C: 36ns/78ns
IGBT - 650 V 100 A FS3 FOR EV TR
IGBT, 650V, 100A, 175DEG C, 660W ROHS COMPLIANT: YES
IGBT - 650 V 100 A FS3 FOR EV TR
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 488-AFGY100T65SPD-ND | 279-AFGY100T65SPD | 1337863-AFGY100T65SPD | AFGY100T65SPD | 12AJ6777 | AFGY100T65SPD |
| Product Name | Single IGBTs | 650 V 100 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Single IGBTs | Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3 | Automotive | |
| Packing Method | Tube | Tube; Tube |